Analyzing the Influence of SiO₂ Buried Layer Thickness and Positioning on the Performance of 20 nm N-MOSFETs. Diyala Journal of Engineering Sciences , [S. l.], v. 18, n. 3, p. 22–36, 2025. DOI: 10.24237/djes.2025.18302. Disponível em: https://djes.info/index.php/djes/article/view/1807. Acesso em: 6 sep. 2025.