Synthesis and Optical Properties of CdSxSe1-x Semiconductor Nanomaterials by Chemical Vapor  Deposition Method

Nadia M. Jassim

doi:10.24237/djes.2019.12307

Authors

Nadia M. Jassim
nadiajassim@sciences.uodiyala.edu.iq
Department of Physics, college of science, Daiyla University, Iraq

Keywords:

Chemical Vapor Deposition (CVD), Semiconductor nanomaterial, CdS, CdSe, Field Emission Scanning Electron Microscopy (FESEM), Resolution Transmission Electron Microscopy (HRTEM)

Abstract

Highly pure and crystalline CdS_xSe_{1 -x}nanostructures have been successfully synthesized via Chemical Vapor Deposition (CVD) method, changing the components of x, in order to adjust the band gap of materials, and the relationship with the lattice constant. Using X-ray Diffraction (XRD) to characterize the phase structures and elemental compositions of the samples, and using Field Emission Scanning Electron Microscopy (FESEM) to observe the surface morphology of CdS_xSe_{1 -x}nanomaterials and confirm the VLS growth mechanism. Using the High Resolution Transmission Electron Microscopy (HRTEM) and Selected Area Electron Diffraction (SAED) to analyze the crystal structure and the growth direction of the materials

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