Design and Simulation of a 12 GHz Two-Stage LNA for Ku-Band Telecommunication Applications
DOI:
https://doi.org/10.24237/djes.2024.18204Keywords:
ADS software, GaAs FET, Low noise amplifier, Matching network (MN), Microstrip technology, Multi stage, Noise figureAbstract
The Low Noise Amplifier (LNA) is typically the initial step in any microwave receiver circuit and is crucial to the receiver's quality. The design, analysis, and modeling of single-stage and multi-stage low-noise amplifiers combined with an optimal matching network at wideband frequencies between 11 - 13 GHz are presented in this study. The amplifier circuit's heart, the embedded GaAs FET transistor MGF2407A in Advance Design System tool, operates in class AB mode with a drain source voltage of 4 V and a gate source voltage of -0.2 V. The matching circuit was constructed and optimized at the transistor's input and output after the source and load impedances were extracted using the source and load-pull technique. The stability factor of simulated amplifier was greater than 4 in the 11–13 GHz frequency range. The noise figure (NF) and power gain at 12 GHz were 34 dB and 0.391, respectively. The input and output sides have exceptionally low reflection coefficients, with values below -15 dB. According to simulation results, the LNA has a broad bandwidth of 2 GHz and an acceptable NF between 0.5 and 0.3 within the bandwidth range of the Ku-Band applications. This amplifier circuit model can be used to create and build various LNA circuits for a variety of uses.
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Copyright (c) 2025 Ammar D. Fakhri, Kahlan H. Hamid, Mohammad Tariq Yaseen , Mohammed I. Dawod
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